Integrated devices and circuits

K. W. Goossen, J. A. Walker, L. A. D’Asaro, B. Tseng, R. Leibenguth, D. Kossives, D. D. Bacon, D. Dahringer, L. M. F. Chirovsky, A. L. Lentine, and D. A. B. Miller, “GaAs MQW Modulators Integrated with Silicon CMOS,” IEEE Photonics Technology Lett. 7, 360‑362, 1995

A. V. Krishnamoorthy, A. L. Lentine, K. W. Goossen, J. A. Walker, T. K. Woodward, J. E. Ford, G. F. Aplin, L. A. D’Asaro, S. P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, L. M. F. Chirovsky, D. A. B. Miller, “3‑D integration of MQW modulators over active submicron CMOS circuits: 375 Mb/s transimpedance receiver-transmitter circuit,” IEEE Photonics Technology Lett. 7, 1288‑1290 (1995)

A. V. Krishnamoorthy, T. K. Woodward, R. A. Novotny, K. W. Goossen, J. A. Walker, A. L. Lentine, L. A. D’Asaro, S. P. Hui, B. Tseng, R. Leibenguth, D. Kossives, D. Dahringer, L. M. F. Chirovsky, G. F. Aplin, R. G. Rozier, F. E. Kiamilev, and D. A. B. Miller, “Ring oscillators with optical and electrical readout based on hybrid GaAs MQW modulators bonded to 0.8 um silicon VLSI circuits,” Electronics Lett. 31, 1917‑1918 (1995)

A. L. Lentine, K. W. Goossen, J. A. Walker, L. M. F. Chirovsky, L. A. D’Asaro, S. P. Hui, B. T. Tseng, R. E. Leibenguth, D. P. Kossives, D. W. Dahringer, D. D. Bacon, T. K. Woodward, and D. A. B. Miller, “Arrays of Optoelectronic Switching Nodes Comprised of Flip-Chip-Bonded MQW Modulators and Detectors on Silicon CMOS Circuitry,” IEEE Photonics Technol. Lett., 8, 221‑223 (1996)

A. K. Okyay, A. J. Pethe, D. Kuzum, S. Latif, D. A. Miller, and K. C. Saraswat, “SiGe optoelectronic metal-oxide semiconductor field-effect transistor,” Opt. Lett. 32, 2022-2024 (2007)

J. E. Roth, S. Palermo, N. C. Helman, D. P. Bour, D. A. B. Miller, and M. Horowitz, “An Optical Interconnect Transceiver at 1550 nm Using Low-Voltage Electroabsorption Modulators Directly Integrated to CMOS,” J. Lightwave Technol. 25, 3739 – 3747 (2007)

A. K. Okyay, D. Kuzum, S. Latif, D. A. B. Miller and K. C. Saraswat, “Silicon germanium CMOS optoelectronic switching device: Bringing light to latch,” IEEE Trans. Electron Devices 54, 3252-3259 (2007)

S. Latif, S. E. Kocabas, L. Tang, C. Debaes & D. A. B. Miller, “Low capacitance CMOS silicon photodetectors for optical clock injection”, Appl. Phys. A – Materials Science and Processing 95, 1129-1135 (2009)

L. Tang, S. Latif, and D. A. B. Miller, “Plasmonic device in silicon CMOS,” Electronics Lett. 45, 706 – 708 (2009)

R. Chen, J. Fu, D. A. B. Miller, and J. S. Harris, Jr., “Design and Analysis of CMOS-Controlled Tunable Photodetectors for Multiwavelength Discrimination,” J. Lightwave Technol. 27, 5451-5460 (2009)

H.-Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration,” IEEE Electron Device Lett. 30, 1161-1163 (2009)

H.-Y. Yu, D. Kim, S. Ren, M. Kobayashi, D.A. B. Miller, Y. Nishi, and K. C. Saraswat, “Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si,” Appl. Phys. Lett. 95, 161106-3 (2009) https://doi.org/10.1063/1.3254181

S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated with SOI Waveguides,” IEEE Photonics Technol. Lett. 24, 461 – 463 (2012)  https://doi.org/10.1109/LPT.2011.2181496