Optoelectronic integration technology
H. V. Demir, J.-F. Zheng, V. A. Sabnis, O. Fidaner, J. Hanberg, J. S. Harris, D. A. B. Miller, “Self-Aligning Planarization and Passivation for Integration Applications in III–V Semiconductor Devices,” IEEE Trans. Semicond. Manufacturing, 18, 182-189 (2005)
V. A. Sabnis, H. V. Demir, O. Fidaner, Jun-Fei Zheng, J. S. Harris, Jr., D. A. B. Miller, N. Li, Ta-Chung Wu, H.-T. Chen and Yu-Min Houng, “Intimate monolithic integration of chip-scale photonic circuits,” IEEE J. Sel. Top. Quantum Electron. 11, 1244 – 1265 (2005)
Kai Ma, R. Chen, D. A. B. Miller, and J. S. Harris, Jr., “Novel on-chip fully monolithic integration of GaAs devices with completely fabricated Si CMOS circuits,” IEEE J. Sel. Top. Quantum Electron. 11, 1278 – 1283 (2005)
J. F. Zheng, H. V. Demir, V. A. Sabnis, O. Fidaner, J. S. Harris, and D. A. B. Miller, “Self-aligned via and trench for metal contact in III-V semiconductor deivces,” J. Vac. Sci. Technol. B 24, 1117-1122 (2006)
H.-Y. Yu, S. Ren, W. S. Jung, A. K. Okyay, D. A. B. Miller, and K. C. Saraswat, “High-Efficiency p-i-n Photodetectors on Selective-Area-Grown Ge for Monolithic Integration,” IEEE Electron Device Lett. 30, 1161-1163 (2009)
H.-Y. Yu, D. Kim, S. Ren, M. Kobayashi, D.A. B. Miller, Y. Nishi, and K. C. Saraswat, “Effect of uniaxial-strain on Ge p-i-n photodiodes integrated on Si,” Appl. Phys. Lett. 95, 161106-3 (2009) https://doi.org/10.1063/1.3254181
S. Ren, Y. Rong, T. I. Kamins, J. S. Harris, and D. A.B. Miller, “Selective epitaxial growth of Ge/Si0.15Ge0.85 quantum wells on Si substrate using reduced pressure chemical vapor deposition,” Appl. Phys. Lett. 98, 151108
S. Ren, T. I. Kamins, and D. A. B. Miller, “Thin Dielectric Spacer for the Monolithic Integration of Bulk Germanium Quantum Wells With Silicon-on-Insulator Waveguides,” IEEE Photonics Journal 3, 739 – 747 (2011)
J. Raja Jain, D.-S. Ly-Gagnon, K. C. Balram, J. S. White, M. L. Brongersma, D. A. B. Miller, and R. T. Howe, “Tensile-strained germanium-on-insulator substrate fabrication for silicon-compatible optoelectronics,” Opt. Mater. Express 1, 1121-1126 (2011)
D. Nam, D. Sukhdeo, A. Roy, K. Balram, S.-L. Cheng, K. C.-Y. Huang, Z. Yuan, M. Brongersma, Y. Nishi, D. A. B. Miller, and K. Saraswat, “Strained germanium thin film membrane on silicon substrate for optoelectronics,” Opt. Express 19, 25866-25872 (2011)
J. R. Jain, A. Hryciw, T. M. Baer, D. A. B. Miller, M. L. Brongersma and R. T. Howe, “A micromachining-based technology for enhancing germanium light emission via tensile strain,” Nature Photonics 6, 398–405 (2012) https://doi.org/10.1038/nphoton.2012.111
S. A. Claussen, K. C. Balram, E. T. Fei, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Selective area growth of germanium and germanium/silicon-germanium quantum wells in silicon waveguides for on-chip optical interconnect applications,” Opt. Mater. Express 2, 1336-1342 (2012)
http://www.opticsinfobase.org/ome/abstract.cfm?URI=ome-2-10-1336
S. Ren, Y. Rong, S. A. Claussen, R. K. Schaevitz, T. I. Kamins, J. S. Harris, and D. A. B. Miller, “Ge/SiGe Quantum Well Waveguide Modulator Monolithically Integrated with SOI Waveguides,” IEEE Photonics Technol. Lett. 24, 461 – 463 (2012) https://doi.org/10.1109/LPT.2011.2181496
